advanced power n-channel enhancement mode electronics corp. power mosfet 100% avalanche test bv dss 750v fast switching characteristic r ds(on) 1.45 simple drive requirement i d 4 8a rohs compliant & halogen-free description absolute maximum ratings@ t j =25 o c(unless otherwise specified) symbol units v ds drain-source voltage v v gs gate-source voltage v i d @t c =25 a i d @t c =100 a i dm pulsed drain current 1 a p d @t c =25 total power dissipation w e as single pulse avalanche energy 2 mj t stg t j operating junction temperature range thermal data symbol value units rthj-c maximum thermal resistance, junction-case 2.5 /w rthj-a maximum thermal resistance, junction-ambient 65 /w data & specifications subject to change without notice drain current, v gs @ 10v 4 drain current, v gs @ 10v 4 AP2763I-A-HF 18 + 30 8 5 halogen-free product 30 50 parameter rating 750 1 storage temperature range -55 to 150 -55 to 150 parameter 201502254 g d s g d s to-220cfm(i) a p2763 series are from advanced power innovated design and silicon process technology to achieve the lowest possible on- resistance and fast switching performance. it provides the designe r with an extreme efficient device for use in a wide range of powe r applications. the to-220cfm package is widely preferred for all commercial- industrial through hole applications. the mold compound provides a high isolation voltage capability and low thermal resistance between the tab and the external heat-sink .
electrical characteristics@t j =25 o c(unless otherwise specified) symbol parameter test conditions min. typ. max. units bv dss drain-source breakdown voltage v gs =0v, i d =1ma 750 - - v r ds(on) static drain-source on-resistance 3 v gs =10v, i d =4.0a - - 1.45 v gs(th) gate threshold voltage v ds =v gs , i d =250ua 2 - 4 v g fs forward transconductance v ds =10v, i d =4.0a - 7 - s i dss drain-source leakage current v ds =600v, v gs =0v - - 100 ua i gss gate-source leakage v gs = + 30v, v ds =0v - - + 100 na q g total gate charge i d =4a - 47 75 nc q gs gate-source charge v ds =600v - 8.5 - nc q gd gate-drain ("miller") charge v gs =10v - 20 - nc t d(on) turn-on delay time v dd =360v - 15 - ns t r rise time i d =4a - 13 - ns t d(off) turn-off delay time r g =10 -74 - ns t f fall time v gs =10v - 21 - ns c iss input capacitance v gs =0v - 1880 3010 pf c oss output capacitance v ds =25v - 140 - pf c rss reverse transfer capacitance f=1.0mhz - 9 - pf r g gate resistance f=1.0mhz - 2.6 5.2 source-drain diode symbol parameter test conditions min. typ. max. units v sd forward on voltage 3 i s =4.0a, v gs =0v - - 1.5 v t rr reverse recovery time i s =4.0a, v gs =0v, - 400 - ns q rr reverse recovery charge di/dt=100a/s - 7 - c notes: 1.pulse width limited by max. junction temperature. 2.starting t j =25 o c , v dd =50v , r g =25 , l=1mh 3.pulse test this product is sensitive to electrostatic discharge, please handle with caution. use of this product as a critical component in life support or other similar systems is not authorized. apec does not assume any liability arising out of the application or use of any product or circuit described herein; neither does it convey any license under its patent rights, nor the rights of others. apec reserves the right to make changes without further notice to any products herein to improve reliability, function or design. AP2763I-A-HF 2 4.ensure that the junction temperature does not exceed t jmax. . .
ap2763i-a-h f fig 1. typical output characteristics fig 2. typical output characteristics 25 fig 3. normalized bv dss v.s. junction fig 4. normalized on-resistance temperature v.s. junction temperature fi g 5. forward characteristic o f fig 6. gate threshold voltage v.s. reverse diode junction temperature 3 0.0 1.0 2.0 3.0 4.0 5.0 0246810 v ds , drain-to-source voltage (v) i d , drain current (a) t c =25 o c v g =4.0v 10v 7.0v 5.0v 4.5v 0.00 1.00 2.00 3.00 4.00 5.00 0 4 8 12 16 20 v ds , drain-to-source voltage (v) i d , drain current (a) t c =150 o c 10v 7.0v 5.0v 4.5v v g =4.0v 0.0 0.5 1.0 1.5 2.0 2.5 3.0 -50 0 50 100 150 t j , junction temperature ( o c ) normalized r ds(on) i d = 4.0 a v g =10v 0.0 2.0 4.0 6.0 8.0 10.0 0 0.2 0.4 0.6 0.8 1 1.2 v sd , source-to-drain voltage (v) i s (a) t j =25 o c t j =150 o c 0.4 0.8 1.2 1.6 -50 0 50 100 150 t j ,junction temperature ( o c) normalized v gs(th) 0.8 0.9 1.0 1.1 1.2 -50 0 50 100 150 junction temperature ( o c) normalized bv dss .
ap2763i-a-h f fig 7. gate charge characteristics fig 8. typical capacitance characteristics 25 fig 9. maximum safe operating area fi g 10. effective transient thermal im p edanc e fig 11. switching time waveform fig 12. gate charge waveform 4 t d(on) t r t d(off) t f v ds v gs 10% 90% q v g 10v q gs q gd q g charge 0 2 4 6 8 10 12 0 102030405060 q g , total gate charge (nc) v gs , gate to source voltage (v) v ds = 380 v v ds = 480 v v ds = 600 v i d = 4.5 a 1 10 100 1000 10000 1 5 9 1317212529 v ds , drain-to-source voltage (v) c (pf) f =1.0mh z c iss c oss c rss 0.001 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 10 t , pulse width (s) normalized thermal response (r thjc ) p dm duty factor = t/t peak t j = p dm x r thjc + t c t t 0.02 0.01 0.05 0.1 0.2 duty factor=0.5 single pulse 0.01 0.10 1.00 10.00 100.00 0.1 1 10 100 1000 v ds , drain-to-source voltage (v) i d (a) t c =25 o c single pulse 100us 1ms 10ms 100ms 1s dc .
marking information 5 AP2763I-A-HF part numbe r package code date code (ywwsss) y last digit of the year ww week sss sequence 2763i ywwsss a option .
|
